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IGERT Papers
2008
Terahertz emission mechanisms in InAsxP1- x Patric Lockhart, P. S. Dutta, Pengyu Han, and X.-C. Zhang, Appl. Phys. Lett. 92, 011102 (2008).
Nicholas Karpowicz, Jianming Dai, Xiaofei Lu, Liangliang Zhang, Cunlin Zhang, Yunqing Chen, Masashi Yamaguchi, Hongwei Zhao, Matthew Price-Gallagher, Keith Johnson, Orval Mamer, Alain Lesimple, Clark Fletcher, and X.-C. Zhang, A coherent heterodyne time-domain spectrometer covering entire terahertz “gap”, Appl. Phys. Letts., 92, (2008).
2007
“Indium nitride as a novel terahertz radiation source for time-domain THz-system”, Digest of theJoint 32nd International Conference on Infrared and Millimeter Waves, and 15th International Conference on Terahertz Electronics, Cardiff, UK (2007), vol. 1, Ingrid Wilke, Ricardo Ascazubi, H. Lu, W. J. Schaff.
Nicholas Karpowicz, David Dawes, Mark Perry, and X.-C. Zhang, “Fire Damage on carbon fiber materials characterization by THz waves, “THz Science and Technology for Military and Security Application, Selected Topics in Electrics and Systems, 46, 21, edited by Woolard, Jensen, Hwu, and Shur. ISBN 9-789812-771797. World Scientific. 2007.
Tim Walsh and S.Y. Lin “High power density and efficiency Thermophotovoltaic Energy Conversion Using a Photonic Crystal Emitter and 2D Metal Grid Filter”, IEEE Electronic Devices (submitted Sep. 2007).
“Onset of thermal degradation in poly(p-phenylene vinylene) films deposited by chemical vapor deposition”, Cynthia A. Gedelian, Gregory A. Ten Eyck, and Toh-Ming Lu, Synthetic Metals 157, 48 (2007).
“Self-shadowing in ballistic fan formation from point seeds", M. Pelliccione and T.-M. Lu, Phys. Rev. B 75, 245431 (2007).
“Non-local effects in thin film growth”, M. Pelliccione and T.-M. Lu, Modern Physics Letters B, Vol. 21, No. 19, 1207 (2007).
“Plasma-enhanced atomic layer deposition of palladium on a polymer substrate”, G. A. Ten Eyck, S. Pimanpang, J. S. Juneja, H. Bakhru, T.-M. Lu, G.-C. Wang, Chemical Vapor Deposition 13, Issue 6-7, 307 (2007).
2006
“Two-dimensional imaging with plasma-generated terahertz waves”, H. Zhong, N. Karpowicz, and X.-C. Zhang, Proc. Joint 31st Int. Conf. on Infrared and Millimeter Waves and 14th Int. Conf. on Terahertz Electronics, 1, 335 (2006).
"Adhesion-free growth of AlSb bulk crystals in silica crucibles," R. Pino, Y. Ko and P.S. Dutta, Journal of Crystal Growth 290 (2006) 29-34.
"Breakdown of dynamic scaling in surface growth under shadowing", Matt Pelliccione, T. Karabacak, and T.-M. Lu, Phys. Rev. Lett. 96 146105 (2006).
"Ultrafast recombination in Si-doped InN", R. Ascazubi, I. Wilke, S. Cho, H. Lu, W. J. Schaff, Applied Physics Letters, 88 (11) 112111 (2006).
“Terahertz interferometric and synthetic aperture imaging”, J. F. Federici, A. Stepanov, A. Bandyopadhyay, A. Sengupta, D. E. Gary, M. D. Federici, B. Schulkin, R. B. Barat,
E. Michalopoulou
, and D. Zimdars, J. Op. Soc. of Am. A 23 (5) 1168 (2006)
“Detection of terahertz radiation in gated two-dimensional structures governed by dc current”, D. Veksler, F. Teppe, A. P. Dmitriev, V. Yu. Kachorovskii, W. Knap, and M. S. Shur, Phys. Rev. B 73, 125328 (2006).
“Generation-recombination noise in forward biased 4H-SiC p-n diodes”, Sergey L. Rumyantsev, Alexander P. Dmitriev, Michael E. Levinshtein, Dmitry Veksler, Michael S. Shur, John W. Palmour, Mrinal K. Das, and Brett A. Hull, J. of Appl. Phys. 100, 064505 (2006).
“Detection and emission of terahertz radiation by nanometer-size field effect transistors”, D. B. Veksler, A. El Fatimy, N. Dyakonova, F. Teppe, W. Knap, N. Pala, S. Rumyantsev, M. S. Shur, D. Seliuta, G. Valusis, S. Bollaert, A. Shchepetov,Y. Roelens, C. Gaquiere, D. Theron, and A. Cappy, Proceedings of 14th Int. Symp. "Nanostructures: Physics and Technology"
St Petersburg
,
Russia
, June 26-30, pp 331-333 (2006).
“Terahertz detection by GaN/AlGaN transistors”, El Fatimy, N. Dyakonova, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Gaquiere, D. Theron, and A. Cappy, IEEE Electronics Letters, accepted in 2006.
“GaN heterodimensional Schottky diode for THz detection”, D. Veksler, F. Aniel, S. Rumyantsev, M. S. Shur, N. Pala, X. Hu, R. S. Q. Fareed, and R. Gaska, Proceedings of 5th IEEE Conference on Sensors 2006, Submitted.
“Intrinsic electric fields in AlGaN quantum wells”, S. Marcinkevičius, A. Pinos, K. Liu, D. Veksler, M. S. Shur, J. Zhang, and R. Gaska, Applied Physics Letters, submitted in 2006.
"Fire damage on carbon fiber materials characterized by THz waves", Nicholas Karpowicz, David Dawes, Mark J. Perry, and X.-C. Zhang, Proc. SPIE, 6212, 62120G, (2006)
"Terahertz emission profile from laser-induced air plasma", Hua Zhong, Nicholas Karpowicz and X.-C. Zhang, Applied Physics Letters. 88, 261103 (2006).
"Damage assessment of aircraft composite materials using terahertz waves", Nicholas Karpowicz, David Dawes, Mark J. Perry, and X.-C. Zhang, Int. J. of High Speed Elec. and Sys., accepted and waiting for print.
"Orthogonal rendezvous routing protocol for wireless mesh networks", Bow-Nan Cheng, Murat Yuksel, and Shivkumar Kalyanaraman, Proceedings of IEEE International Conference on Network Protocols (ICNP), November 2006, accepted.
"Orthogonal rendezvous routing protocol for wireless mesh networks", Bow-Nan Cheng, Murat Yuksel, and Shivkumar Kalyanaraman, Submitted to IEEE Transactions on Networking, submitted 2006.
2005
"Below bandgap optical absorption in tellurium-doped GaSb," A. Chandola, R. Pino, P.S. Dutta, Semicond. Sci. Technol. 20 (2005) 886-893.
"Native defect compensation in III-Antimonide Bulk Substrates," R. Pino, Y. Ko and P.S. Dutta, High Performance Devices, edited by Robert E Leoni III, (World Scientific Publishing, April 2005, ISBN 981-256-196-X) p.34.
“Enhanced terahertz emission from impurity compensated GaSb”, Ricardo Ascazubi, Carl Shneider, Ingrid Wilke, Robinson Pino and Partha S. Dutta, Phys. Rev. B 72 (4), 045328 (2005).
“THz Imaging and Sensing for Security Applications - Explosives, Weapons, and Drugs”, John F. Federici, Brian Schulkin, Feng Huang, Dale Gary, Robert Barat, Filipe Oliveira, and David Zimdars, Semicond. Sci. Technol. 20 (7), S266-S280 (2005).
"Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor”, F. Teppe, W. Knap, D. Veksler, M. S. Shur, A. P. Dmitriev, V. Yu. Kachorovskii, and S. Rumyantsev, Appl. Phys. Lett. 87 (5), 052107 (2005).
"Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor”, F. Teppe, D. Veksler, V. Yu. Kachorovski, A. P. Dmitriev, X. Xie, X.-C. Zhang,
S. Rumyantsev
, W. Knap, and M. S. Shur, Appl. Phys. Lett. 87 (2), 022102 (2005).
Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs”
Pala, N. (Sensor Electronic Technology, Columbia, SC, USA;); Teppe, F.; Veksler, D.; Deng, Y.; Shur, M.S.; Gaska, R. Source: Electronics Letters, v 41, n 7, 31 March 2005, p 447-9
“Compact continuous-wave subterahertz system for inspection applications”
Karpowicz, N. (Center for THz Res., Rensselaer Polytech. Inst., Troy, NY, USA); Hua Zhong; Cunlin Zhang; Kuang-I Lin; Jenn-Shyong Hwang; Jingzhou Xu; Zhang, X.-C. Source: Applied Physics Letters, v 86, n 5, 31 Jan. 2005, p 54105-1-3
2004
“Inspection of space shuttle insulation foam defects using a 0.2 THz Gunn diode oscillator”
Hua Zhong (Center for THz Res., Rensselaer Polytech. Inst., Troy, NY, USA;); Karpowicz, N.; Jingzhou Xu; Yanqing Deng; Ussery, W.; Shur, M.; Zhang, X.-C. Source: Conference Digest of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics (IEEE Cat. No.04EX857), 2004, p 753-4
“High-resistivity GaSb bulk crystals grown by the vertical bridgman method”, R. Pino, Y. Ko, and P.S. Dutta, J. of Electronic materials, 23 (9), 1012 (2004).
“Burstein-Moss shift in impurity-compensated bulk Ga1− xIn xSb substrates”, R. Pino, Y. Ko, and P. S. Duttaa, Shekhar Guha (Air Force Research Laboratory), Leonel P. Gonzalez (Air Force Research Laboratory), J. Appl. Phys. 96 (9), 5349 (2004).
“Enhancement of infrared transmission in GaSb bulk crystals by carrier compensation”, R. Pino, Y. Ko, P. S. Dutta, J. Appl. Phy. 96 (2), 1064 (2004).
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