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Robinson Pino
Electrical Engineering
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I worked with Partha Dutta in the Department of Electrical Computer and Systems Engineering. We characterized and modeled the electro-optical properties of III-V compound semiconductors and their suitability as potential emitters of THz radiation.
More specifically, I studied native defect compensation in III-antimonide semiconductors (binary and ternary) employing various techniques such as low temperature growth and extrinsic doping. Then, the obtained semiconductor materials were characterized for emission of radiation using time-domain THz emission spectroscopy (TDTES). Finally, employing current hypotheses for THz emission from semiconductor surfaces, namely the surface-field effect and the photo-Dember effect, I was able to reconcile theory and experiment by modeling the THz emission properties from the extracted dc Hall-effect electrical parameters which matched the optical observations from TDTES experimental measurements.
Robinson Pino is currently an Advisory Engineer at the IBM Microelectronics division in Burlington, VT, in the CMOS Modeling and Characterization group. He obtained the Ph.D. degree in electrical engineering at the Rensselaer Polytechnic Institute, NY, on January 2005 and M.Sc. degree in 2003. He received the B.E.(E.E.) degree from the City University of New York - City College, NY, in 2002.
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