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Theeradetch Detchprohm
Research Associate Professor
Education:
Ph.D. (EE), Nagoya University, Japan (Mar 1996).
M.S. EE, Nagoya University, Japan (Mar 1993)
B.S. EE, Nagoya University, Japan (Mar 1991)
Career Highlights:
2008-Present: Research Associate Professor, Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY
2004-2007: Research Associate Professor, Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY
2004: Senior Epi Engineer, Blue Photonics, Walnut, CA
2001-2004: R&D Research Scientist and Epi Department Manager, Uniroyal Optoelectronics, Tampa, FL
1998-2001: Postdoctoral Researcher, Meijo University, Nagoya, Japan
1997-1998: Visiting Lecturer, Sirindhorn Institute of Technology, Thailand
1996-1997: Senior Engineer, Alpha-TI, Bangkok, Thailand
Research Interests:
Dr. Detchprohm’s primary focus lays in the epitaxial technology, device fabrication and device physics of group III-nitride semiconductor. At RPI, he currently concentrates on improving performance of GaInN based light emitters in the green (520-560 nm) for solid state lighting and laser applications.
Selected Publications:
1. T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and D. Hanser, “Green Light Emitting Diodes on a-Plane GaN Bulk Substrates”,Appl. Phys. Lett. (2008) in print
2. T. Detchprohm, M. Zhu, Y. Xia, Y. Li, W. Zhao, J. Senawiratne, and C. Wetzel, “Improved performance of GaInN based deep green light emitting diodes through V-defect reduction”, Phys. Stat. Sol. (c) 5, 2207 (2008). http://dx.doi.org/doi:10.1002/pssc.200778566
3. Y. Li, W. Zhao, Y. Xia, M. Zhu, J. Senawiratne, T. Detchprohm, E. F. Schubert, C. Wetzel, “Temperature dependence of the quantum efficiency in green light emitting diode dies “, Phys. Stat. Sol. (c) 4, 2784 (2007). http://dx.doi.org/doi:10.1002/pssc.200674750
4. C. Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson, “GaInN/GaN growth optimization for high-power green light-emitting diodes”, Appl. Phys. Lett. 85, 866 (2004). http://dx.doi.org/doi:10.1063/1.1779960
5. S. Sano, T. Detchprohm, S. Mochizuki, S. Kamiyama, H. Amano and I. Akasaki: “Low-dislocation-density GaN and AlxGa1-xN (x<=0.13) grown on grooved substrates” J. Cryst. Growth 235, 129 (2002). http://dx.doi.org/doi:10.1016/S0022-0248(01)01838-3
6. T. Detchprohm, M. Yano, S. Sano, R. Nakamura, S. Michiduki, T. Nakamura, H. Amano, and I. Akasaki: “Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystal” Jpn. J. App. Phys. Lett. 40, L16 (2001). http://dx.doi.org/doi:10.1143/JJAP.40.L16
7. T. Takeuchi, T. Detchprohm, M. Iwaya, N. Hayashi, K. Isomura, K. Kimura, M. Yamaguchi, H. Amano, I. Akasaki, Yw. Kaneko, R. Shioda, S. Watanabe, T. Hidaka, Y. Yamaoka, Ys. Kaneko, and N. Yamada: ” Improvement of far-field pattern in nitride laser diodes” Appl. Phys. Lett. 75, 2960 (1999). http://dx.doi.org/doi:10.1063/1.125201
8. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake : “Analysis of deep levels in n-type GaN by transient capacitane methods”, J. Appl. Phys. 76,304(1994). http://dx.doi.org/doi:10.1063/1.357144
9. T. Detchprohm, K. Hiramatsu, N. Sawaki, and I. Akasaki: “Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates”, J. Cryst. Growth 145, 192 (1994). http://dx.doi.org/doi:10.1016/0022-0248(94)91049-9
10. T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki: “Hydride vapor phase epitaxy growth of high quality GaN film using ZnO buffer layer”, Appl. Phys. Lett., 61, 2688 (1992). http://dx.doi.org/doi:10.1063/1.108110
Contact:
(518) 276-3430
detcht@rpi.edu
Home Page: http://www.rpi.edu/~detcht
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